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HBDM60V600W
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR TRANSISTOR HALF H-BRIDGE MOTOR/ACTUATOR DRIVER
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Features
* * * Epitaxial Planar Die Construction Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Sub-Component P/N MMBT2907A_DIE MMBTA06_DIE Reference Q1 Q2 Device Type PNP Transistor NPN Transistor
Mechanical Data
* * * * * * * * Case: SOT-363 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020D Terminal Connections: See Schematic & Pin Configuration Terminals: Finish - Matte Tin annealed over Alloy 42 leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.016 grams (approximate)
CQ1 EQ1 EQ2
Q1 MMBT2907A MMBTA06 Q2
Top View
BQ1
BQ2
CQ2
Device Schematic
Maximum Ratings: Total Device
Characteristic Operating and Storage Junction Temperature Range
@TA = 25C unless otherwise specified Symbol VEBO Value -55 to +150 Unit C
Thermal Characteristics: Total Device
Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient Air (Note 3) Symbol PD RJA Value 200 625 Unit mW C/W
Maximum Ratings: Sub-Component Devices
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous (Note 3)
Notes:
@TA = 25C unless otherwise specified Q1-PNP Transistor (MMBT2907A) -60 -60 -5.5 -600 Q2-NPN Transistor (MMBTA06) 80 65 6 500 Unit V V V mA
Symbol VCBO VCEO VEBO IC
1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 7 or on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
1 of 7 www.diodes.com
July 2008
(c) Diodes Incorporated
HBDM60V600W Electrical Characteristics: PNP (MMBT2907A) Transistor (Q1)
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Collector Cutoff Current Base Cutoff Current ON CHARACTERISTICS (Note 4) Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEX IBL Min -60 -60 -5.5 100 100 100 100 50 Max -10 -50 -50 300 -0.3 -0.5 -0.95 -1.3 45 10 40 100 80 30 @TA = 25C unless otherwise specified Unit V V V nA nA nA V V Test Condition IC = -10A, IE = 0 IC = -10mA, IB = 0 IE = -10A, IC = 0 VCB = -50V, IE = 0 VCE = -30V, VEB(OFF) = -0.5V VCE = -30V, VEB(OFF) = -0.5V IC = -100A, VCE = -10V IC = -1.0mA, VCE = -10V IC = -10mA, VCE = -10V IC = -150mA, VCE = -10V IC = -500mA, VCE = -10V IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA IC = -150mA, IB = -15mA IC = -500mA, IB = -50mA VCE = -2.0V, IC = -10mA, f = 100MHz VCE = -30V, IC = -150mA, IB1 = -15mA VCC = -6.0V, IC = -150mA, IB1 = IB2 = -15mA
DC Current Gain
hFE
Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time Turn-Off Time Storage Time Fall Time
VCE(SAT) VBE(SAT)
fT ton td tr toff ts tr
100
MHz ns ns ns ns ns ns
Electrical Characteristics: NPN (MMBTA06) Transistor (Q2)
Characteristic OFF CHARACTERISTICS (Note 4) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Base Cutoff Current Collector Cutoff Current Emitter-Base Cutoff Current ON CHARACTERISTICS (Note 4) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Turn-on Voltage Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS Current Gain-Bandwidth Product
Notes: 4. Short duration pulse test used to minimize self-heating effect.
@TA = 25C unless otherwise specified Max 100 100 100 0.4 0.8 0.95 Unit V V V nA nA nA V V V MHz Test Condition IC = 100A, IE = 0 IC = 1mA, IB = 0 IE = 100A, IC = 0 VCB = 80V, IE = 0 VCE = 90V, VBE = 0 VEB = 5V, IC = 0 VCE = 1V, IC = 10mA VCE = 1V, IC = 100mA IC = 100mA, IB = 10mA VCE = 1V, IC = 100mA IC = 100mA, IB = 5mA VCE = 20V, IC = 10mA, f = 100MHz
Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICES IEBO hFE VCE(SAT) VBE(ON) VBE(SAT) fT
Min 80 65 6 250 100 0.7 100
Typ 0.2 0.75
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
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July 2008
(c) Diodes Incorporated
HBDM60V600W Typical Characteristics
200
@TA = 25C unless otherwise specified
PD, POWER DISSIPATION (mW)
150
100
50
0 0 25 50 75 100 125 150 175 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve 200
PNP (MMBT2907A) Transistor (Q1) Plots:
30
-VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001
IC = 1mA IC = 10mA IC = 100mA IC = 30mA IC = 300mA
20 C, CAPACITANCE (pF) 10
Cibo
5.0
Cobo
1.0 0.1
1.0 10 REVERSE VOLTAGE (V) Fig. 2 Typical Capacitance
IC IB = 10
30
1 0.1 10 100 -IB, BASE CURRENT (mA) Fig. 3 Typical Collector Saturation Region 0.01
0.6 -VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V)
1,000
VCE = 5V
0.5
TA = 150C
0.4
hFE, DC CURRENT GAIN
100
TA = 25C TA = -50C
0.3
TA = 150C
0.2
TA = 25C
10
0.1
TA = -50C
10 1,000 100 -IC, COLLECTOR CURRENT (mA) Fig. 4 Collector Emitter Saturation Voltage vs. Collector Current
0
1 1 1 1,000 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical DC Current Gain vs. Collector Current July 2008
(c) Diodes Incorporated
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
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HBDM60V600W
1.0 -VBE(ON), BASE EMITTER VOLTAGE (V)
VCE = 5V
1,000 fT, GAIN BANDWIDTH PRODUCT (MHz)
0.9 0.8 0.7 0.6
TA = 25C TA = -50C
100
0.5 0.4 0.3 0.2 0.1
T A = 150C
10
1 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 7 Typical Gain Bandwidth Product vs. Collector Current 1
1 10 100 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base Emitter Voltage vs. Collector Current
NPN (MMBTA06) Transistor (Q2) Plots
10 ICBO, COLLECTOR-BASE CURRENT (nA)
2.0 VCE, COLLECTOR EMITTER VOLTAGE (V) 1.8 1.6 1.4 1.2
IC = 10mA IC = 30mA
1
1.0 0.8 0.6 0.4 0.2 0 0.001
IC = 1mA IC = 100mA
0.1
50 75 100 125 TA, AMBIENT TEMPERATURE (C) Fig. 8 Typical Collector-Cutoff Current vs. Ambient Temperature
0.01 25
1 0.1 10 100 IB, BASE CURRENT (mA) Fig. 9 Typical Collector Saturation Region 0.01
0.500 VCE(SAT), COLLECTOR TO EMITTER SATURATION VOLTAGE (V) 0.450 0.400
IC IB = 10
10,000
hFE, DC CURRENT GAIN
TA = -50C
1,000
0.350 0.300
TA = 25C
0.250 0.200 0.150 0.100 0.050 0 1
T A = 150C
100
10
1,000 10 100 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical Collector Emitter Saturation Voltage vs. Collector Current
1 1
10 1,000 100 IC, COLLECTOR CURRENT (mA) Fig. 11 Typical DC Current Gain vs. Collector Current
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
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July 2008
(c) Diodes Incorporated
HBDM60V600W
1.0 VBE(ON), BASE EMITTER VOLTAGE (V) 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 100 1 10 IC, COLLECTOR CURRENT (mA) Fig. 12 Typical Base Emitter Voltage vs. Collector Current 0.1 0.1 1,000 fT, GAIN BANDWIDTH PRODUCT (MHz)
9V-12V
100
10
10 IC, COLLECTOR CURRENT (mA) Fig. 13 Typical Gain Bandwidth Product vs. Collector Current
1 1
Current Schematic along with Application Example:
HBDM60V600W
R1 EQ1
36
HBDM60V600W
MMBT2907A Q1 R3 BQ1 CQ1 Q3 Half H-Bridge R5 1k CQ2 M MB TA0 6 Q2 BQ2 EQ2 D3 C2 D1 0
C1 D2 Q1
MMBT2907A
BQ1 CQ1
R4 Q4
Motor
Half H-Bridge CQ2 M MB TA0 6 D4 Q2 BQ2 R8 1k
Forward
0
Reverse
Note:
D1, D2, D3, D4: Switching Diodes (MMBD4448) Q3, Q4: NPN Transistors (MMBTA06)
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
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July 2008
(c) Diodes Incorporated
HBDM60V600W Application Example Schematic: (with Package Pinouts)
9V-12V R1 36
U1 A1 NC C2 1 2 3 6 5 4 C1 NC
C1
R2 33k R3
A2 U2 BQ1 BQ2 1 2 3 6 5 4 CQ1 EQ1 EQ2 470 U3 EQ1 BQ2 1 CQ2 2 3
MMBD4448DW U4 BQ1 R4 470 BQ2 CQ2 1 2
6
CQ1 EQ1 C2
Motor
CQ2
CQ1 6 BQ1 5 EQ2 4
5
HBDM60V600W R5
INV5V0W
EQ2 3 4 HBDM60V600W
Q1 R6 1k
U5 A1 1 A2 2 A3 3
6 5 4
C1 C2 C3
1k
MMBD4448HTW
Reverse
Forward Control Input 5V/0V
Ordering Information
Part Number HBDM60V600W-7
Notes:
(Note 5) Case SOT-363 Packaging 3000/Tape & Reel
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
HB01 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: T = 2006) M = Month (ex: 9 = September)
HB01
Date Code Key Year Code Month Code
2006 T Jan 1
2007 U Feb 2 Mar 3
2008 V Apr 4
2009 W May 5
YM
2010 X Jun 6
2011 Y Jul 7
2012 Z Aug 8 Sep 9
2013 A Oct O
2014 B Nov N
2015 C Dec D
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
6 of 7 www.diodes.com
July 2008
(c) Diodes Incorporated
HBDM60V600W Package Outline Dimensions
A
BC
H K M
J
D
F
L
SOT-363 Dim Min Max A 0.10 0.30 B 1.15 1.35 C 2.00 2.20 D 0.65 Typ F 0.40 0.45 H 1.80 2.20 J 0 0.10 K 0.90 1.00 L 0.25 0.40 M 0.10 0.22 0 8 All Dimensions in mm
Suggested Pad Layout
E E
Z
G
C
Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C 1.9 E 0.65
Y X
IMPORTANT NOTICE Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website, harmless against all damages. LIFE SUPPORT Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written approval of the President of Diodes Incorporated.
HBDM60V600W
Document number: DS30701 Rev. 5 - 2
7 of 7 www.diodes.com
July 2008
(c) Diodes Incorporated

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